FAULT DIAGNOSIS OF SUBTHRESHOLD LEAKAGE CURRENT DEFECTS IN DRAM

Authors

  • K. Manju Priya*, S.Malini Author

Keywords:

Functional Fault Models (FFM), Address decoder Fault (AF), Stuck At Fault (SAF), Transition Fault (TF), Coupling Fault (CRF),Complex Read Fault CRF), Automatic Repeat Query (ARQ), Forward Error Correction (FEC), In Line Test (ILT), Bose Chaudhuri Hocquenghem code (BCH), Syndrome Storing-based error Detection (SSD).

Abstract

The minimum feature size of dynamic RAM has been down-scaled, so several studies have been carried out to determine ways to protect cell data from leakage current in many areas. Due to leakage sources, permanent error occurs. Many permanent faults are a result of manufacturing defects, which can be detected during manufacture testing. These errors can also occur at runtime. A self-contained adaptive system for detecting and bypassing permanent errors in on-chip interconnects is proposed. This system reroutes data on erroneous links to a set of spare wires without interrupting the data flow

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Published

2016-01-30

Issue

Vol. 3 No. 1 (2016): January 2016

Section

Articles

How to Cite

FAULT DIAGNOSIS OF SUBTHRESHOLD LEAKAGE CURRENT DEFECTS IN DRAM. (2016). International Journal of Engineering Sciences & Management Research, 3(1), 131-139. https://ijesmr.com/index.php/ijesmr/article/view/186